Over time, there have been questions we have been asked on more than one occassion. Before logging a support call, make sure to check through our library of frequently asked questions first to see if your particular problem has been asked before.
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Question : How can I planarize my oxide or metal layer at the nanometre level?
Category : Applications
Answer:
By using the Logitech CDP system for CMP processes, the parameters can be adjusted to find the optimum process conditions for a particular wafer or die. Variables such as platen speed and direction, carrier speed and direction, down- force, wafer back pressure, slurry flow rate and platen temperature can all be independently adjusted to remove 100s of Angstroms/min. in a controlled manner. Consumables such as pad type and slurry composition can be changed to suit metal, oxide or nitride processes using a single machine system.